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Ge Wafer Applications |
IR optics Solar cell Optical fiber Semiconductor and electronics device |
Ge Wafer Properties | |
Crystal structure | Cubic |
Lattice parameter | a=0.565754 |
Density ( g / cm3 ) | 5.323 |
Melting point ( °C ) | 937.4 |
Thermal conductivity @300 K | 59.9 |
Specification | |
Diameter | Ø 2" / 3" / 4" |
Thickness | 0.5 mm |
Conductivity type | P - type or N - type |
Dopant available | Antimony , , Undoped |
Orientation | <100> , <111> , <110> , or others |
Off orientation | From 2° to 10° off |
Resistivity range | N - type : <=0.4 ohm-cm P - type : 0.005 ~ 30 ohm-cm Undoped : >=30 ohm-cm |
Surface finish | One side or two sides polished |
EPD | <= 5000 or <= 10000 cm-2 |
Package method | Single wafer container with outer foil bag |
Range of diameter | Dia.0.7mm-Dia.400mm |
Range of curve radius | R1.5-R∞ etc. |
Tolerance of diameter | +/-0.1, +/-0.01, +/-0.005 etc. |
Surface accuracy | λ , 1/2λ , 1/4λ , 1/10λ etc. |
Tolerance of Thickness | +/-0.1, +/-0.05, +/-0.01 etc. |
Centration | +/-2′,+/-1′ etc. |
Aperture N | 5, 1 etc. |
Irregularity ΔN | 2, 1, 0.5, 0.2 etc. |
Surface quality | 60/40, 40/20, 20/10, 10/5 etc. |